A new silicon carbide (SiC) power semiconductor developed in Japan offers the potential for fuel use in hybrid-drive vehicles to be reduced by a further 10 per cent.
Toyota's research institute, Toyota Central R&D Labs, and partner Denso Corporation have been working on a more efficient replacement for silicon semiconductors since the 1980s. Toyota, the parent company, became involved in the research work with the launch of the first-generation Prius in 1997.
The SiC reduces electrical energy loss normally associated with semiconductors in the PCU (Power Control Units) switching on and off. PCUs account for as much as 25 per cent of the electrical power loss in hybrids, of which, 20 per cent of the total is wasted by conventional semiconductors.
The SiC reduces drain on the vehicle's battery and thus the hybrid-drive system can run on pure battery-stored energy (in 'EV' mode) for longer. Testing undertaken with an SiC-equipped PCU on board a Prius indicates fuel economy improves by at least five per cent, in accordance with Japan's standard JC08 fuel consumption test.
Due to the lower power loss implicit in using SiC semiconductors, the PCU's coil and capacitor can be much smaller, allowing the PCU to be reduced in size by as much as 80 per cent of volume, according to Toyota. That reduces weight and improves packaging.
The semiconductors in PCUs transfer electrical energy from the battery to the car's electric motor and back again, when the vehicle is recovering energy from the drive wheels through regenerative braking. Using silicon carbide reduces resistance in the semiconductor, which in turn reduces energy loss.
R&D is taking place at Toyota's Hirose plant, and has potential application in battery/electric vehicles and plug-in hybrids as well as conventional hybrids like the Prius. Toyota plans to test vehicles on public roads in Japan at some point within the next 12 months.
Pictures show third generation Prius, Hirose plant, silicon (left) and silicon carbide semiconductor, conventional PCU (left) and PCU with SiC